NPN 2N3441

20/09/2012

COMSET SEMICONDUCTORS

SILICON POWER TRANSISTOR

The 2N3441 are NPN transistors mounted in TO-66 metal package with the collector

connected to the case .

They are intended for use in general purpose switching and amplifier applications.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

Collector-Emitter Voltage

140

V

Collector-Base Voltage

160

V

Emitter-Base Voltage

7

V

Collector Current

3

A

Base Current

2

A

Total Power Dissipation

25

W

Junction Temperature

200

°C

Storage Temperature

-65 to +200

°C

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

Collector-Emitter Sustaining

Voltage (*)

140

-

-

V

Collector Cutoff Current

-

-

10

mA

Collector Cutoff Current

-

-

5

mA

-

-

6

Emitter Cutoff Current

-

-

1

mA

Collector-Emitter saturation

Voltage (*)

-

-

6

V

Base-Emitter on Voltage (*)

-

-

6.5

V

DC Current Gain

25

-

100

-

5

-

-

(*) Pulse Duration = 300

µs, Duty Cycle <= 1.5%