PNP BD684 – BD684A

23/10/2012

COMSET SEMICONDUCTORS

1 | 3

SILICON DARLINGTON POWER TRANSISTORS

The BD684 and BD684A are PNP eptaxial-base transistors in monolithic Darlington circuit for

audio and video applications.

They are mounted in Jedec TO-126 plastic package.

NPN complements are BD683 and BD683A.

Compliance to RoHS

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

Collector-Emitter Voltage

-120

V

Collector-Base Voltage

-120

V

Emitter-Base Voltage

-5

V

Collector Current

-4

A

-6

Base current peak value

-0.1

A

Total power Dissipation

40

W

Junction Temperature

150

°C

Storage Temperature

-65 to +150

°C

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

Thermal Resistance, Junction to mouting base

3.12

K/W

Thermal Resistance, Junction to ambient in free air

100

K/W