BUZ71 datasheet(1/3 Pages) COMSET

Part #	BUZ71

Description	N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

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Manufacturer	COMSET [Comset Semiconductor]

Direct Link	http://comset.halfin.com

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BUZ71

01/10/2012

COMSET SEMICONDUCTORS

1/3

SEMICONDUCTORS

N CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTORS

FEATURE

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

VDS

Drain-Source Voltage

50

V

IDS

Continuous Drain Current TC= 37°C

14

A

IDM

Pulsed Drain Current TC= 25°C

56

IAR

Avalanche Current, Limited by Tjmax

14

EAS

Avalanche Energy, Single pulse

ID = 14 A, VDD = 25 V, RGS = 25 Ω, L= 30.6 µH, Tj = 25°C

6

mJ

EAR

Avalanche Energy, Periodic Limited by Tjmax

1

VGS

Gate-Source Voltage

20

V

RDS(on)

Drain-Source on Resistance

0.1

Ω

PT

Power Dissipation at Case Temperature TC= 25°C

40

W

tJ

Operating Temperature

-55 to +150

°C

tstg

Storage Temperature range

-55 to +150

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

RthJC

Thermal Resistance, junction-case

3.1

K/W

RthJA

Thermal Resistance, junction-ambient

75

N channel in a plastic TO220 package.

They are intended for use in switched mode power supplies,

motor control, welding,

DC-DC & DC-AC converters, and in general purpose

switching applications.

Compliance to RoHS.

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