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TIP112 Datasheet(PDF) 2 Page - Comset Semiconductor

Part # TIP112
Description  SILICON DARLINGTON POWER TRANSISTORS
PDF  3 Pages
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Manufacturer  COMSET [Comset Semiconductor]
Direct Link  http://comset.halfin.com
Logo COMSET - Comset Semiconductor

TIP112 Datasheet(HTML) 2 Page - Comset Semiconductor

  TIP112 Datasheet HTML 1Page - Comset Semiconductor TIP112 Datasheet HTML 2Page - Comset Semiconductor TIP112 Datasheet HTML 3Page - Comset Semiconductor  
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NPN TIP110-111-112
05/10/2012
COMSET SEMICONDUCTORS
2 |3
SEMICONDUCTORS
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
RthJ-case
From junction-case
TIP110
2.5
°C/W
TIP111
TIP112
RthJ-amb
From junction-ambient
TIP110
62.5
°C/W
TIP111
TIP112
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ
Max
Unit
ICBO
Collector Cutoff Current
IE= 0,VCB = VCBOmax
TIP110
-
-
1
mA
TIP111
TIP112
ICEO
Collector Cutoff Current
IE= 0, VCE = 1/2
VCEOmax
TIP110
-
-
2
mA
TIP111
TIP112
IEBO
Emitter Cutoff Current
VEB= 5 V, IC= 0
TIP110
-
-
2
mA
TIP111
TIP112
VCEO
Collector-Emitter
Breakdown Voltage (*)
IC= 30 mA, IB= 0
TIP110
60
-
-
V
TIP111
80
-
-
TIP112
100
-
-
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
IC= 2 A, IB= 8 mA
TIP110
-
-
2.5
V
TIP111
TIP112
VBE(on)
Base-Emitter Voltage
(*)
IC= 2 A, VCE= 4 V
TIP110
-
-
2.8
V
TIP111
TIP112
hFE
DC Current Gain (*)
VCE= 4 V, IC= 1 A
TIP110
1000
-
-
-
TIP111
TIP112
VCE= 4 V, IC= 2 A
TIP110
500
-
-
TIP111
TIP112
COB
Output Capacitance
IE= 0, VCB = 10 V
f= 0.1MHz
TIP110
-
-
100
pF
TIP111
TIP112
(*) Pulse Width
≈ 300 µs, Duty Cycle ∠ 2.0%



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