SOT-23

Plastic-Encapsulate Diodes

SWITCHING DIODE

FEATURES

MMBD2004S type is a silicon switching dual in series diode

manufactured by the epitaxial planar process, designed for

applications requiring high voltage capability. Power dissipation

MARKING : B6D

Maximum Ratings @Ta=25

℃

Parameter

Symbol

Limit

Unit

Non-Repetitive Peak

Reverse Voltage

300

V

DC Blocking Voltage

240

V

Peak Repetitive Current

200

mA

Continuous Forward Current

225

mA

Peak Repetitive Forward Current

625

mA

Forward Surge Current t=1

μ

s

4.0

A

Forward Surge Current t=1s

1.0

A

Power Dissipation

Pd

250

mW

Junction

Temperature

150

℃

Storage

Temperature Range

-

55~+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

M

in

M

ax

U

nit

Reverse breakdown voltage

240

V

Reverse voltage leakage current

0.1

μA

Forward voltage

1

V

Diode capacitance

f=1MHz

5

pF

Reveres recovery time

50

ns

SOT-23

1

2

3

MMBD

4

2012-1

WILLAS ELECTRONIC CORP.

Features

Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

Low profile surface mounted application in order to

optimize board space.

Low power loss, high efficiency.

High current capability, low forward voltage drop.

High surge capability.

Guardring for overvoltage protection.

Ultra high-speed switching.

Silicon epitaxial planar chip, metal silicon junction.

Lead-free parts meet environmental standards of

MIL-STD-19500 /228

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Package outline

Mechanical data

Epoxy : UL94-V0 rated flame retardant

,

Method 2026

•

0.146(3.7)

0.130(3.3)

0.012(0.3) Typ.

0.071(1.8)

0.056(1.4)

0.040(1.0)

0.024(0.6)

0.031(0.8) Typ.

0.031(0.8) Typ.

Dimensions in inches and (millimeters)

SOD-123H

Pb Free Product

1.0A SURFACE MOUNT SCHOTTKY

SOD-123

PACKAGE

WILLAS

BARRIER RECTIFIERS -20V- 200V

FM120-M

THRU

FM1200-M

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase half wave, 60Hz, resistive of inductive load.

For capacitive load, derate current by 20%

WILLAS ELECTRONIC CORP.

201

2-06

 

RATINGS

Marking Code

12

13

14

15

16

18

10

115

120

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

20

30

40

50

60

80

100

150

200

14

21

28

35

42

56

70

105

140

20

30

40

50

60

80

100

150

200

Volts

Volts

Volts

Maximum Average Forward Rectified Current

 

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

 

1.0

 

30

Amps

 

Amps

Typical Thermal Resistance (Note 2)

Typical Junction Capacitance (Note 1)

Operating Temperature Range

Storage Temperature Range

TSTG

 

 

-55 to +125

40

120

 

- 65 to +175

 

 

-55 to +150

℃/W

PF

℃

℃

 

CHARACTERISTICS

Maximum Forward Voltage at 1.0A DC

0.50

0.70

0.85

0.9

0.92

Volts

@TA=25℃

0.5

Maximum Average Reverse Current at

Rated DC Blocking Voltage

@TA=125℃

10

 

mAmps

 

NOTES:

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

2- Thermal Resistance From Junction to Ambient

 

 

RoHS product for packing code suffix "G"

Halogen free product for packing code suffix "H"

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Pb-Free package is available

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

Moisture Sensitivity Level 1