ACT111A

Rev 2, 22-Oct-12

- 3 -

www.active-semi.com

Copyright © 2012 Active-Semi, Inc.

ABSOLUTE MAXIMUM RATINGS

PARAMETER

VALUE

UNIT

IN to GND

-0.3 to 34

V

SW to GND

V

BST to GND

V

FB to GND

-0.3 to + 6

V

Continuous SW Current

Internally Limited

A

220

°C/W

Maximum Power Dissipation

0.5

W

Operating Junction Temperature

-40 to 150

°C

Storage Temperature

-55 to 150

°C

Lead Temperature (Soldering, 10 sec)

300

°C

DIM to GND

-0.3 to + 3

V

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX

UNIT

Input Voltage

4.8

30

V

Input Voltage Rising

4.0

4.4

4.7

V

250

mV

Supply Operation Current

1

2

mA

Switching Frequency

1.15

1.4

1.65

MHz

Maximum Duty Cycle

90

92

95

%

Minimum On-Time

75

ns

Effective FB Voltage

97

102

107

mV

FB Leakage Current

100

nA

CC Current Limit

Duty Cycle = 5%

1.8

2.4

3.0

A

PWM DIM Frequency

10

kHz

DIM Threshold Voltage

DIM rising

1.66

V

DIM Hysteresis

DIM rising

100

mV

DIM Input Leakage

1

µA

High-Side Switch On-Resistance

0.3

Ω

Low-Side Switch On-Resistance

15

Ω

Thermal Shutdown Temperature

160

°C

Thermal Hysteresis

10

°C

ELECTRICAL CHARACTERISTICS

: Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods may

affect device reliability.