www.berex.com

BeRex, Inc. 1735 North 1

Specifications are subject to change without notice. ©BeRex 2012

Rev. 1.7

BCL016B

SUPER LOW NOISE PHEMT CHIP (.15µm x 160µm)

The BeRex BCL016B is a GaAs super low noise pHEMT with a nominal 0.15 micron gate length and 160 micron gate

width making the product ideally suited for applications requiring very low noise and high associated gain, in

frequencies of up to 40 GHz. The BCL016B offers high insertion gain and a low noise figure for broadband

assure reliability

SYMBOL

PARAMETER/TEST CONDITIONS

TEST

FREQ.

MIN.

TYPICAL

Max.

UNIT

NF

Noise Figure (Vds = 2V, Id = 10mA)

12 GHz

18 GHz

0.4

0.6

dB

Associated Gain (Vds = 2V, Id = 10mA)

12 GHz

18 GHz

12.5

10.5

13.5

11.5

dB

P1dB

Output Power @ p1dB (Vds = 2V, Id = 10mA)

12 GHz

13

14.5

dBm

Saturated Drain Current (Vgs = 0V, Vds = 2V)

50

mA

Transconductance (Vds = 2V, Vgs = -0.3V)

120

mS

Pinch-off Voltage (Vds = 2V, Id = 200µA)

-0.7

V

Gate-Drain Breakdown Voltage, (Ig = -200 µA, source open)

9

V

Gate-Source Breakdown Voltage, (Ig = -200 µA, drain open)

6

V

Thermal Resistance, junction to back side

(Au-Sn Eutectic Attach)

270

° C/W

PRODUCT FEATURES



Low 0.4dB typical noise figure @12 GHz



High 13.5dB Typical associated Gain @12 GHz





0.15 X 160 Micron Recessed Gate

APPLICATIONS



Commercial



Military / Hi-Rel.