AOC2802 datasheet(1/5 Pages) AOSMD

Part #	AOC2802

Description	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	AOSMD [Alpha & Omega Semiconductors]

Direct Link	http://www.aosmd.com

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1 / 5 page

AOC2802

Common-Drain Dual N-Channel Enhancement Mode Field

Effect Transistor

General Description

Product Summary

Vss

20V

ID (at VGS=4.5V)

6A

RSS(ON) (at VGS=4.5V)

< 34m

Ω

RSS(ON) (at VGS=4.0V)

< 35m

Ω

RSS(ON) (at VGS=3.1V)

< 43m

Ω

RSS(ON) (at VGS=2.5V)

< 54m

Ω

The AOC2802 uses advanced trench technology to provide

excellent RSS(ON), low gate charge and operation with gate

voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.

It is ESD protected. This device is suitable for use as a uni-

directional or bi-directional load switch, facilitated by its

common-drain configuration.

WLCSP 1.57x1.57_4

Symbol

VSS

VGS

TA=25°C

I S

ISM

PD

TJ, TSTG

Note 1. Mounted on minimum pad PCB

Note 2. PW <300 µs pulses, duty cycle 0.5% max

-55 to 150

60

Power Dissipation

Note1

TA=25°C

°C

Units

Parameter

6

Absolute Maximum Ratings TA=25°C unless otherwise noted

±12

20

Maximum

A

V

W

Source Current (Pulse)

Note2

Gate-Source Voltage

Source-Source Voltage

Source Current (DC)

Note1

Junction and Storage Temperature Range

1.3

Equivalent Circuit

G2

G1

S1

Top View

Bottom View

Pin1(S1)

S2

G1

G2

D1

S1

D2

S2

Rev 4: Nov 2012

www.aosmd.com

Page 1 of 5

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