AOU3N50 datasheet(2/6 Pages) AOSMD

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AOD3N50/AOU3N50

Symbol

Min

Typ

Max

Units

500

600

BVDSS

/∆TJ

0.54

IGSS

Gate-Body leakage current

±100

VGS(th)

Gate Threshold Voltage

3.5

4.1

4.5

RDS(ON)

2.3

Ω

gFS

2.8

VSD

0.78

Maximum Body-Diode Continuous Current

ISM

Ciss

221

276

331

Coss

31.4

Crss

2.1

2.6

4.1

1.9

3.9

5.9

Ω

6.7

8.0

Qgs

1.7

3.0

Qgd

2.7

3.2

tD(on)

13.2

23.0

tD(off)

20.5

24.6

Static Drain-Source On-Resistance

VGS=10V, ID=1.5A

Reverse Transfer Capacitance

VGS=0V, VDS=25V, f=1MHz

SWITCHING PARAMETERS

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=250V, ID=3A,

RG=25Ω

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

BVDSS

µA

Zero Gate Voltage Drain Current

ID=250µA, VGS=0V

VDS=0V, VGS=±30V

Drain-Source Breakdown Voltage

ID=250µA, VGS=0V, TJ=25°C

ID=250µA, VGS=0V, TJ=150°C

IDSS

Zero Gate Voltage Drain Current

VDS=500V, VGS=0V

Gate Drain Charge

VDS=5V,ID=250µA

VDS=400V, TJ=125°C

IS=1A,VGS=0V

VDS=40V, ID=1.5A

Forward Transconductance

DYNAMIC PARAMETERS

Diode Forward Voltage

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Total Gate Charge

VGS=10V, VDS=400V, ID=3A

Gate Source Charge

Maximum Body-Diode Pulsed Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

tD(off)

20.5

24.6

18.0

trr

134

161

Qrr

0.89

1.1

µC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

IF=3A,dI/dt=100A/µs,VDS=100V

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Charge IF=3A,dI/dt=100A/µs,VDS=100V

Body Diode Reverse Recovery Time

A. The value of R θJA is measured with the device in a still air environment with T A =25°C.

B. The power dissipation P

D is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in

setting the upper dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)=150°C.

D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of T

J(MAX)=150°C.

G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C.

H. L=60mH, I

AS=2A, VDD=150V, RG=10Ω, Starting TJ=25°C

Rev 6: Aug 2011

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