ADM2209E datasheet(2/12 Pages) AD

2 / 12 page

REV. 0

–2–

ADM2209E–SPECIFICATIONS

(VDD = 10.8 V to 13.2 V, VSTBY = 3.3 V

5% or 5 V

10%, C1 = C2 = 0.1

F. All

specifications TMIN to TMAX unless otherwise noted.)

Parameter

Min

Typ1 Max

Units

Test Conditions/Comments

OPERATING CONDITIONS

Operating Voltage Range, VDD

+10.8 +12 +13.2 V

Standby Voltage Range, VSTBY

+3.15

+5.5

VDD Power Supply Current

No Load, All Driver Inputs at 0.8 V or 2 V,

All Receiver Inputs at +15 V or –15 V

VSTBY Supply Current

100

200

µA

No Load, All Tx IN at VSTBY or Open

TRANSMITTER (DRIVER) CMOS INPUTS

Input Pull-Up Current

µA

Transmitter Input at GND

High Level Input Voltage, VINH

2.1

Low Level Input Voltage, VINL

0.4

TRANSMITTER (DRIVER) EIA-232 OUTPUTS

Output Voltage Swing

±5.0 ±9.0

All Transmitter Outputs Loaded with 3 k

Ω to GND

Output Short-Circuit Current, IOS

±5

±15 ±30

VO = 0 V, VIN = 0.8 V

Output Resistance

300

Ω

VDD = 0 V, VSTBY = 0 V, VIN =

±2 V

RECEIVER EIA-232 INPUTS

Input Voltage Range

–15

+15

Input Low Threshold, VTL

0.4

1.45

Input High Threshold, VTH

1.7

2.4

Input Hysteresis

0.25

Input Resistance, RIN

Ω

VIN =

±15 V

RECEIVER OUTPUTS

High Level Output Voltage, VOH

2.4

IOH = –40

µA

Low Level Output Voltage, VOL

0.2

0.4

IOL = +1.6 mA

Output Leakage Current (Except R5A, R5B)

0.05

±5

µAV

DD = 0 V

DRIVER SWITCHING CHARACTERISTICS

Maximum Data Rate

460

kbps

RL = 3 kΩ to 7 kΩ, CL = 50 pF to 470 pF

460

kbps

RL = 3 k

Ω to 7 kΩ, C

L = 50 pF to 1000 pF,

TA = 0

°C to +85°C, 5 V ± 10% Only

920

kbps

RL = 3 k

Ω to 7 kΩ, C

L = 50 pF to 470 pF,

VSTBY = 5 V

± 5%, V

DD = 12 V

± 5%

Propagation Delay, High to Low, TPHL

µsR

L = 3 kΩ, CL = 1000 pF (Figures 1 and 2)

Propagation Delay, Low to High, TPLH

µsR

L = 3 k

Ω, C

L = 1000 pF (Figures 1 and 2)

Transition Region Slew Rate

µsR

L = 3 k

Ω to 7 kΩ, C

L = 50 pF to 470 pF

Transition Region Slew Rate (5 V)

µsR

L = 3 k

Ω to 7 kΩ, C

L = 50 pF to 1000 pF,

VSTBY = 5 V

± 10% Only. Measured from +3 V

to –3 V or Vice Versa

RECEIVER SWITCHING CHARACTERISTICS

Maximum Data Rate

920

kbps

CL = 150 pF, VSTBY = 5 V ± 5% Only

460

kbps

CL = 150 pF

Propagation Delay, R1–R4

0.4

0.75

µsC

L = 150 pF

Propagation Delay, R5

µsC

L = 150 pF

Output Rise Time, tr

Figures 3 and 4

Output Fall Time, tf

ESD AND EMC

ESD Protection (I-O Pins)

±15

Human Body Model

±15

IEC1000-4-2 Air Discharge

±8

IEC1000-4-2 Contact Discharge

ESD Protection (All Other Pins)

±2.5

Human Body Model, MIL-STD-883B

EFT Protection (I-O Pins)

±2

IEC1000-4-4

EMI Immunity

V/m

IEC1000-4-3

NOTES

1All typicals are given for V

DD = +12 V, VSTBY = 5 V, TA = +25

°C.

2Current into device pins is defined as positive. Current out-of-device pins is defined as negative. All voltages are referred to ground unless otherwise specified. For

current, minimum and maximum values are specified as an absolute value and the sign is used to indicate direction. For voltage logic levels, the more positive value is

designated as maximum. For example, if –6 V is a maximum, the typical value (–6.8 V) is more negative.

3Only one driver output shorted at a time.

4If receiver inputs are unconnected, receiver output is a logic high.

5Refer to typical curves. Driver output slew rate is measured from the +3.0 V to the –3.0 V level on the output waveform. Slew rate is determined by load capacitance.

Specifications subject to change without notice.

ADM2209E Datasheet(PDF) 2 Page - Analog Devices

ADM2209E Datasheet(HTML) 2 Page - Analog Devices

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL