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AOTF22N50 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOTF22N50 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 6 page  AOT22N50/AOTF22N50 Symbol Min Typ Max Units 500 600 BVDSS /∆TJ 0.57 V/ oC 1 10 IGSS Gate-Body leakage current ±100 n Α VGS(th) Gate Threshold Voltage 3.4 4 4.5 V RDS(ON) 0.21 0.26 Ω gFS 25 S VSD 0.7 1 V IS Maximum Body-Diode Continuous Current 22 A ISM 88 A Ciss 2465 3086 3710 pF Coss 200 290 380 pF Crss 14 24 35 pF Rg 0.7 1.4 2.1 Ω Qg 55 69 83 nC Qgs 17 22 27 nC Qgd 12 24 36 nC tD(on) 60 ns tr 122 ns tD(off) 124 ns V Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C Maximum Body-Diode Pulsed Current Input Capacitance Output Capacitance Turn-On DelayTime Turn-Off DelayTime VGS=10V, VDS=250V, ID=22A, RG=25Ω Gate resistance DYNAMIC PARAMETERS Static Drain-Source On-Resistance VGS=10V, ID=11A Reverse Transfer Capacitance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz Total Gate Charge VGS=10V, VDS=400V, ID=22A Turn-On Rise Time Gate Source Charge Gate Drain Charge SWITCHING PARAMETERS Diode Forward Voltage IS=1A,VGS=0V VDS=40V, ID=11A Forward Transconductance Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions VDS=400V, TJ=125°C Zero Gate Voltage Drain Current VDS=500V, VGS=0V µA VDS=0V, VGS=±30V VDS=5V ID=250µA IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V BVDSS tD(off) 124 ns tf 77 ns trr 415 524 630 ns Qrr 7.5 9.6 12 µC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Charge IF=22A,dI/dt=100A/µs,VDS=100V Turn-Off DelayTime G Body Diode Reverse Recovery Time IF=22A,dI/dt=100A/µs,VDS=100V Turn-Off Fall Time A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation P D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial T J =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, I AS=7A, VDD=150V, RG=25Ω, Starting TJ=25°C Rev1: Dec 2011 www.aosmd.com Page 2 of 6 |
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