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AOZ1361DI Datasheet(PDF) 8 Page - Alpha & Omega Semiconductors |
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AOZ1361DI Datasheet(HTML) 8 Page - Alpha & Omega Semiconductors |
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8 / 12 page ![]() AOZ1361DI Rev. 2.0 October 2010 www.aosmd.com Page 8 of 12 Detailed Description Introduction The AOZ1361DI is a 35m Ω P-channel high-side load switch with adjustable soft-start slew-rate control, programmable current limit and thermal shutdown. It operates with an input voltage range from 4.5V to 28V. Enable The EN pin is the ON/OFF control for the output switch. The device is enabled when EN pin is high and VIN is above UVLO. The EN pin must be driven to a logic high or logic low state to guarantee operation. While disabled, the AOZ1361DI only draws about 1µA supply current. Under-Voltage Lockout (UVLO) The under-voltage lockout (UVLO) circuit of AOZ1361DI monitors the input voltage and prevents the output MOSFET from turning on until VIN exceeds 3.9V. Adjustable Soft-Start Slew-Rate Control When the EN pin is asserted high, the slew rate control circuitry applies voltage on the gate of the PMOS switch in a manner such that the output voltage and current is ramped up linearly until it reaches the steady-state load current level. The slew rate can be adjusted by an external capacitor connected to the SS pin to ground. The slew rate rise time, Ton, can be set using the following equation: Programmable Current Limit The current limit is programmed by an external resistor connected to the SET pin to ground. This sets a reference voltage to the current limit error amplifier that compares it to a sensed voltage that is generated by passing a small portion of the load current through an internal amplifier. When the sensed load current exceeds the set current limit, the load current is then clamped at the set limit and the Vout drop should be the result of resistance increasing. The AOZ1361DI will stay in this condition until the load current no longer exceeds the current limit or if the thermal shutdown protection is engaged. To set the current limit use Figure 3 on the following page. Thermal Shut-down Protection The thermal overload protection of AOZ1361DI is engaged to protect the device from damage should the die temperature exceeds safe margins due to a short circuit, extreme loading or heating from external sources. 1. AOZ1361DI-01 ( Auto-restart version): During current limit or short circuit conditions, the PMOS resistance is increased to clamp the load current. This increases the power dissipation in the chip causing the die temperature to rise. When the die temperature reaches 130°C the thermal shutdown circuitry will shutdown the device. There is a 30°C hysterisis. The device will turn back on and go through soft start after the temperature drops below +100°C . The thermal shutdown will cycle repeatedly until the over temperature condition disappears or the enable pin is pulled LOW. 2. AOZ1361DI-02 ( Latch-off version): Thermal shut-down protection sets a fault latch and shuts off the internal MOSFET and asserts the FLTB output if the junction temperature exceeds +130°C. The AOZ1361DI can be re-enabled by toggling EN pin after the die temperature drops below +100°C. FLTB The FLTB pin is an open drain output that is asserted low when either an over-current, short-circuit or over- temperature condition occurs. To prevent false alarm, the AOZ1361DI implements a fault delay time for over- temperature, over-current and short-circuit fault conditions. The FLTB pin becomes high impedance when the fault conditions are removed. For AOZ1361DI-02, if the temperature is higher than +130°C, the device will latch off. After that, if temperature drops below +100°C, the FLTB pin will pull high, which means the fault condition has already been removed, although there is no output voltage due to latch off function. A pull-up resistor must be connected between FLTB to 5V or 3.3V to provide a logic signal. TFLT TFLT is a fault delay pin, and its delay time is adjustable by a capacitor connected from TFLT to GND. The delay time can be calculated by: CTLT (µs) = 600 µs / nF x CTFLT (nF) Ton Css V IN × 30 μA -------------------------- = |
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