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ADP3153 Datasheet(PDF) 9 Page - Analog Devices |
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ADP3153 Datasheet(HTML) 9 Page - Analog Devices |
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9 / 12 page ![]() ADP3153 –9– REV. 0 The maximum rms current of the low side FET is: IRMSLS = [DMAXLF (ILVALLEY 2 + I LPEAK 2 + I LVALLEYILPEAK)/3] 0.5 = 8.41 Arms The RDS(ON) for each FET can be derived from the allowable dissipation. If we allow 5% of the maximum output power for FET dissipation, the total dissipation will be: PFETALL = 0.05 VOIOMAX = 2 W Allocating two-thirds of the total dissipation for the high side FET and one-third for the low side FET, the required minimum FET resistances will be: RDS(ON)HSF(MIN) = 1.33/11.5 2 = 10 m Ω RDS(ON)LSF(MIN) = 0.67/8.41 2 = 9.5 m Ω Note that there is a tradeoff between converter efficiency and cost. Larger FETs reduce the conduction losses and allow higher efficiency but lead to increased cost. If efficiency is not a major concern the Fairchild MOSFET NDP6030L or International Rectifier IRL3103 is an economical choice for both the high side and low side positions. Those devices have an RDS(ON) of 14 m Ω at VGS = 10 V and at 25 °C. The low side FET is turned on with at least 10 V. The high side FET, however, is turned on with only 12 V – 5 V = 7 V. If we check the typical output character- istics of the device in the data sheet, we find that for an output current of 10 A, and at a VGS of 7 V, the VDS is 0.15 V, which gives a RDS(ON) = VDS/ID = 15 m Ω. This value is only slightly above the one specified at a VGS of 10 V, so the resistance in- crease due to the reduced gate drive can be neglected. We have to modify, however, the specified RDS(ON) at the expected high- est FET junction temperature of 140 °C by a R DS(ON) multiplier, using the graph in the data sheet. In our case: RDS(ON)MULT = 1.7 Using this multiplier, the expected RDS(ON) at 140 °C is 1.7 × 14 = 24 m Ω. The high side FET dissipation is: PDFETHS = IRMSHS 2R DS(ON) + 0.5 VINILPEAKQGfMAX/IG = 3.72 W where the second term represents the turn-off loss of the FET. (In the second term, QG is the gate charge to be removed from the gate for turn-off and IG is the gate current. From the data sheet, QG is about 50 nC – 70 nC and the gate drive current provided by the ADP3153 is about 1 A.) The low side FET dissipation is: PDFETLS = IRMSLS 2R DS(ON) = 1.7 W (Note that there are no switching losses in the low side FET.) To remove the dissipation of the chosen FETs, proper heatsinks should be used. The Thermalloy 6030 heatsink has a thermal impedance of 13 °C/W with convection cooling. With this heat- sink, the junction-to-ambient thermal impedance of the chosen high side FET θ JAHS will be 13 (heatsink-to-ambient) + 2 (junction- to-case) + 0.5 (case-to-heatsink) = 15.5 °C/W. At full load and at 50 °C ambient temperature, the junction temperature of the high side FET is: TJHSMAX = TA + θJAHS PDFETHS = 105°C A smaller heatsink may be used for the low side FET, e.g., the Thermalloy type 7141 ( θ = 20.3°C/W). With this heatsink, the TJLSMAX = TA + θJALS PDFETLS = 106°C All of the above calculated junction temperatures are safely below the 175 °C maximum specified junction temperature of the selected FET. The maximum operating junction temperature of the ADP3153 is calculated as follows: TJICMAX = TA + θJA (IICVCC + PDR) where θ JA is the junction to ambient thermal impedance of the ADP3153 and PDR is the drive power. From the data sheet, θ JA is equal to 110 °C/W and I IC = 2.7 mA. PDR can be calculated as follows: PDR = (CRSS + CISS)VCC 2 f MAX = 307 mW The result is: TJICMAX = 86°C CIN Selection and Input Current di/dt Reduction In continuous-inductor-current mode, the source current of the high side MOSFET is a square wave with a duty ratio of VO/ VIN. To keep the input ripple voltage at a low value, one or more capacitors with low equivalent series resistance (ESR) and adequate ripple-current rating must be connected across the input terminals. The maximum rms current of the input bypass capacitors is: ICINRMS ≈ [V O(VIN – VO)] 0.5 I OMAX /VIN = 7 Arms Let us select the FA-type capacitor with 2700 µF capacitance and 10 V voltage rating. The ESR of that capacitor is 34 m Ω and the allowed ripple current at 100 kHz is 1.94 A. At 105 °C we would need to connect at least four such capacitors in paral- lel to handle the calculated ripple current. At 50 °C ambient, however, the ripple current can be increased, so three capacitors in parallel are adequate. The ripple voltage across the three paralleled capacitors is: VCINRPL = IOMAX [ESRIN/3 + DMAXHF /(3CIN fMIN )] 140 mV p-p To further reduce the effect of the ripple voltage on the system supply voltage bus and to reduce the input-current di/dt to below the recommended maximum of 0.1 A/ µs, an additional small inductor (L > 1.7 µH @ 10 A) should be inserted between the converter and the supply bus (see Figure 2). Feedback Loop Compensation Design To keep the peak-to-peak output voltage deviation as small as possible, the low frequency output impedance (i.e., the output resistance) of the converter should be made equal to the ESR of the output capacitor. That can be achieved by having a single-pole roll-off of the voltage gain of the gm error amplifier, where the pole frequency coincides with the ESR zero of the output capacitor. A gain with single-pole roll-off requires that the gm amplifier is termi- nated by the parallel combination of a resistor and capacitor. The required resistor value can be calculated from the equation: 36 × R SENSE g m 145 k Ω R COMP () = R E where gm = 2.2 ms and the quantities 36 and 145 k Ω are charac- teristic of the ADP3153. The calculated compensating resis- tance is: R1 R2 = RCOMP = 31 k Ω |
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