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AMP04FS Datasheet(PDF) 4 Page - Analog Devices |
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AMP04FS Datasheet(HTML) 4 Page - Analog Devices |
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4 / 16 page  AMP04 REV. A –4– AMP04E AMP04F Parameter Symbol Conditions Min Typ Max Min Typ Max Units GAIN (G = 100 K/RGAIN) Gain Equation Accuracy G = 1 to 100 0.2 0.5 0.75 % G = 1000 0.4 0.75 % G = 1 to 100 –40 °C ≤ T A ≤ +85°C 0.8 1.0 % Gain Range G 1 1000 1 1000 V/V Nonlinearity G = 1, RL = 5 k Ω 0.005 0.005 % G = 10, RL = 5 k Ω 0.015 0.015 % G = 100, RL = 5 kΩ 0.025 0.025 % Gain Temperature Coefficient ∆G/∆T 30 50 ppm/ °C OUTPUT Output Voltage Swing High VOH RL = 2 k Ω +13 +13.4 +13 V RL = 2 k Ω –40 °C ≤ T A ≤ +85°C +12.5 +12.5 V Output Voltage Swing Low VOL RL = 2 k Ω –40 °C ≤ T A ≤ +85°C –14.5 –14.5 V Output Current Limit Sink 30 30 mA Source 15 15 mA NOISE Noise Voltage Density, RTI eN f = 1 kHz, G = 1 270 270 nV/ √Hz f = 1 kHz, G = 10 45 45 nV/ √Hz f = 100 Hz, G = 100 30 30 nV/ √Hz f = 100 Hz, G = 1000 25 25 nV/ √Hz Noise Current Density, RTI iN f = 100 Hz, G = 100 4 4 pA/ √Hz Input Noise Voltage eN p-p 0.1 to 10 Hz, G = 1 5 5 µV p-p 0.1 to 10 Hz, G = 10 1 1 µV p-p 0.1 to 10 Hz, G = 100 0.5 0.5 µV p-p DYNAMIC RESPONSE Small Signal Bandwidth BW G = 1, –3 dB 700 700 kHz POWER SUPPLY Supply Current ISY 750 900 900 µA –40 °C ≤ T A ≤ +85°C 1100 1100 µA Specifications subject to change without notice. WAFER TEST LIMITS Parameter Symbol Conditions Limit Units OFFSET VOLTAGE Input Offset Voltage VIOS 300 µV max Output Offset Voltage VOOS 3 mV max INPUT CURRENT Input Bias Current IB 40 nA max Input Offset Current IOS 10 nA max INPUT Common-Mode Rejection CMR 0 V ≤ V CM ≤ 3.0 V G = 1 55 dB min G = 10 75 dB min G = 100 80 dB min G = 1000 80 dB min Common-Mode Rejection CMR VS = ±15 V, –12 V ≤ V CM ≤ +12 V G = 1 55 dB min G = 10 75 dB min G = 100 80 dB min (VS = +5 V, VCM = +2.5 V, TA = +25 C unless otherwise noted) |
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