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BUF04GS Datasheet(PDF) 2 Page - Analog Devices |
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BUF04GS Datasheet(HTML) 2 Page - Analog Devices |
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2 / 16 page  BUF04–SPECIFICATIONS ELECTRICAL CHARACTERISTICS Parameter Symbol Conditions Min Typ Max Units INPUT CHARACTERISTICS Offset Voltage VOS 0.3 1 mV –40 °C ≤ T A ≤ +85°C 1.3 4 mV Input Bias Current IB VCM = 0 0.7 5 µA –40 °C ≤ T A ≤ +85°C 2.2 10 µA Input Voltage Range VCM ±13 V Offset Voltage Drift ∆V OS/ ∆T30 µV/°C Offset Null Range ±25 mV OUTPUT CHARACTERISTICS Output Voltage Swing VO RL = 150 Ω, ±10.5 ±11.1 V –40 °C ≤ T A ≤ +85°C ±10 ±11 V RL = 2 k Ω, ±13 ±13.5 V –40 °C ≤ T A ≤ +85°C ±13 ±13.15 V Output Current – Continuous IOUT ±50 ±65 mA Peak Output Current IOUTP Note 2 ±80 mA TRANSFER CHARACTERISTICS Gain AVCL RL = 2 k Ω 0.995 0.9985 1.005 V/V –40 °C ≤ T A ≤ +85°C 0.995 0.9980 1.005 V/V Gain Linearity NL RL = 1 k Ω, V O = ±10 V 0.005 % RL = 150 k Ω 0.008 % POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ±4.5 V to ±18 V 76 93 dB –40 °C ≤ T A ≤ +85°C76 93 dB Supply Current ISY VO = 0 V, RL = ∞ 6.9 8.5 mA –40 °C ≤ T A ≤ +85°C 6.9 8.5 mA DYNAMIC PERFORMANCE Slew Rate SR RL = 2 kΩ, CL = 70 pF 2000 3000 V/ µs Bandwidth BW –3 dB, CL = 20 pF, RL = ∞ 110 MHz Bandwidth BW –3 dB, CL = 20 pF, RL = 1 k Ω 110 MHz Bandwidth BW –3 dB, CL = 20 pF, RL = 150 Ω 110 MHz Settling Time VIN = ±10 V Step to 0.1% 60 ns Differential Phase f = 3.58 MHz, RL = 150 Ω 0.02 Degrees f = 4.43 MHz, RL = 150 Ω 0.03 Degrees Differential Gain f = 3.58 MHz, RL = 150 Ω 0.014 % f = 4.43 MHz, RL = 150 Ω 0.008 % Input Capacitance 3pF NOISE PERFORMANCE Voltage Noise Density en f = 1 kHz 4 nV/ √Hz Current Noise Density in f = 1 kHz 2 pA/ √Hz NOTE 1Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C with an LTPD of 1.3. Specifications subject to change without notice. REV. 0 –2– (@ VS = 15.0 V, TA = +25 C unless otherwise noted) |
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