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STB120N4F6 Datasheet(PDF) 1 Page - STMicroelectronics |
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STB120N4F6 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 18 page ![]() May 2011 Doc ID 17042 Rev 5 1/18 18 STB120N4F6 STD120N4F6 N-channel 40 V, 3.5 m Ω , 80 A, DPAK, D²PAK STripFET™ VI DeepGATE™ Power MOSFET Features ■ Standard threshold drive ■ 100% avalanche tested Application ■ Switching applications ■ Automotive Description These devices are 40 V N-channel STripFET™ VI Power MOSFET based on the ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Figure 1. Internal schematic diagram Order codes VDSS RDS(on) max. ID STB120N4F6 40 V 4 m Ω 80 A (1) 1. Current limited by package STD120N4F6 40 V 4 m Ω 80 A (1) DPAK 1 3 D²PAK 1 3 Table 1. Device summary Order codes Marking Package Packaging STB120N4F6 120N4F6 D²PAK Tape and reel STD120N4F6 DPAK www.st.com |
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