DIM2400ESS12-A000

2/8

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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ABSOLUTE MAXIMUM RATINGS

Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In

extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.

Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect

device reliability.

Symbol

Parameter

Test Conditions

Max.

Units

Collector-emitter voltage

1200

V

Gate-emitter voltage

±20

V

Continuous collector current

2400

A

Peak collector current

4800

A

Max. transistor power dissipation

20830

W

I

Diode I

900

kA

Isolation voltage

– per module

Commoned terminals to base plate.

AC RMS, 1 min, 50Hz

2500

V

THERMAL AND MECHANICAL RATINGS

Internal insulation material:

Baseplate material:

Cu

Creepage distance:

33mm

Clearance:

20mm

CTI (Comparative Tracking Index):

600

Symbol

Parameter

Test Conditions

Min

Typ.

Max

Units

Thermal resistance

– transistor

Continuous dissipation -

junction to case

-

-

6

°C/kW

Thermal resistance

– diode

Continuous dissipation -

junction to case

-

-

13

°C/kW

Thermal resistance

–

case to heatsink (per module)

Mounting torque 5Nm

(with mounting grease)

-

-

6

°C/kW

Junction temperature

Transistor

-

-

150

°C

Diode

-

-

125

°C

Storage temperature range

-

-40

-

125

°C

Screw torque

Mounting

– M6

-

-

5

Nm

Electrical connections

– M4

-

-

2

Nm

Electrical connections

– M8

-

-

10

Nm