SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Test Conditions

f = 1 MHz

V

GS

= 0V

V

DS

= 25V

f = 1 MHz

V

GS

= 10V

V

DD

= 0.5 V

DSS

I

D

= I

D

[Cont.] @ 25

°C

V

GS

= 10V

V

DD

= 0.5 V

DSS

I

D

= I

D

[Cont.] @ 25

°C

R

G

= 2.35

Ω

Characteristic

Drain-to-Case Capacitance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Symbol

C

DC

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d

(on)

t

r

t

d

(off)

t

f

DYNAMIC CHARACTERISTICS

2N7227

MIN

TYP

MAX

12

24

2400

2800

385

540

160

240

100

150

12

24

41

65

12

35

18

190

40

170

13

130

UNIT

pF

nC

ns

1

Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2

Pulse Test: Pulse width < 380

µS, Duty Cycle < 2%

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Pulsed Source Current

1

(Body Diode)

Diode Forward Voltage

GS

= 0V, I

S

= -I

D

[Cont.])

Reverse Recovery Time (I

S

= -I

D

[Cont.], dl

S

/dt = 100A/

µs)

Reverse Recovery Charge (I

S

= -I

D

[Cont.], dl

S

/dt = 100A/

µs)

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

Symbol

Characteristic

Junction to Case

Junction to Ambient

UNIT

Amps

Volts

ns

µC

MIN

TYP

MAX

14

56

1.7

279

1200

3.6

9.0

UNIT

K/W

3

MIN

TYP

MAX

0.83

31

THERMAL CHARACTERISTICS

1.0

10

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

1.0

0.5

0.1

0.05

0.01

0.005

0.001

Note:

Duty Factor D =

t1/t

2

Peak TJ = PDM x ZθJC + TC

t1

t2

0.1

SINGLE PULSE

0.02

0.05

0.2

D=0.5

0.01