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APT10M25 Datasheet(PDF) 2 Page - Advanced Power Technology

Part # APT10M25
Description  Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
PDF  4 Pages
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Manufacturer  ADPOW [Advanced Power Technology]
Direct Link  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APT10M25 Datasheet(HTML) 2 Page - Advanced Power Technology

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DYNAMIC CHARACTERISTICS
APT10M25BVFR
1 Repetitive Rating: Pulse width limited by maximum Tj
4 Starting Tj = +25°C, L = 0.53mH, RG = 25Ω, Peak IL = 75A
2 Pulse Test: Pulse width < 380
µS, Duty Cycle < 2%
5 The maximum current is limited by lead temperature.
3 See MIL-STD-750 Method 3471
6 IS ≤ -ID [Cont.], di/dt = 100A/µs, VR = 50V, Tj ≤ 150°C, RG = 2.0Ω
APT Reserves the right to change, without notice, the specifications and information contained herein.
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current 1 5 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
Peak Diode Recovery dv/dt 6
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/µs)
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/µs)
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Symbol
IS
ISM
VSD
dv/
dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
µC
Amps
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
t r
td(off)
t f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 1.6Ω
MIN
TYP
MAX
4300
5160
1600
2240
650
975
150
225
28
42
75
115
13
26
22
44
40
60
10
20
UNIT
pF
nC
ns
MIN
TYP
MAX
75
300
1.3
5
Tj = 25°C
200
Tj = 125°C
300
Tj = 25°C
0.5
Tj = 125°C
1.1
Tj = 25°C
10
Tj = 125°C
14
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.42
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
5



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