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APT20M11JVFR Datasheet(PDF) 2 Page - Advanced Power Technology

Part # APT20M11JVFR
Description  Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
PDF  4 Pages
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Manufacturer  ADPOW [Advanced Power Technology]
Direct Link  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APT20M11JVFR Datasheet(HTML) 2 Page - Advanced Power Technology

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APT20M11JVFR
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.2
0.1
0.05
0.01
0.005
0.001
0.0005
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/µs)
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/µs)
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Symbol
IS
ISM
VSD
dv/
dt
trr
Q rr
IRRM
UNIT
Amps
Volts
V/ns
ns
µC
Amps
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
t d(on)
t r
t d(off)
t f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 0.6Ω
MIN
TYP
MAX
18000
21600
4100
5740
1350
2025
690
1035
95
140
290
435
20
40
40
80
75
115
10
20
UNIT
pF
nC
ns
MIN
TYP
MAX
175
700
1.3
5
Tj = 25°C
150
250
Tj = 125°C
250
500
Tj = 25°C
0.9
Tj = 125°C
2.5
Tj = 25°C
12
Tj = 125°C
20
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting T
j = +25°C, L = 235µH, RG = 25Ω, Peak IL = 175A
2 Pulse Test: Pulse width < 380
µS, Duty Cycle < 2%
5 I
S ≤ -ID [Cont.],
di/
dt = 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 2.0Ω,
VR = 200V
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL /PACKAGE CHARACTERISTICS
Symbol
RθJC
RθJA
VIsolation
Torque
MIN
TYP
MAX
0.18
40
2500
13
UNIT
°C/W
Volts
lb•in
Characteristic
Junction to Case
Junction to Ambient
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Maximum Torque for Device Mounting Screws and Electrical Terminations.



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