Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

DYNAMIC CHARACTERISTICS

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Test Conditions

V

GS

= 0V

V

DS

= 25V

f = 1 MHz

V

GS

= 10V

V

DD

= 0.5 V

DSS

I

D

= I

D[Cont.]

@ 25°C

V

GS

= 15V

V

DD

= 0.5 V

DSS

I

D

= I

D[Cont.]

@ 25°C

R

G

= 1.6

W

MIN

TYP

MAX

5100

6120

1145

1600

390

585

148

225

47

75

75

110

14

28

21

42

48

75

10

20

UNIT

pF

nC

ns

APT20M42HVR

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

GS

= 0V, I

S

= -I

D[Cont.]

)

Reverse Recovery Time (I

S

= -I

D[Cont.]

, dl

S

/dt = 100A/µs)

Reverse Recovery Charge (I

S

= -I

D[Cont.]

, dl

S

/dt = 100A/µs)

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

UNIT

Amps

Volts

ns

µC

MIN

TYP

MAX

50

200

1.5

160

1.3

temperature.

APT Reserves the right to change, without notice, the specifications and information contained herein.

THERMAL CHARACTERISTICS

Symbol

MIN

TYP

MAX

0.50

40

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

0.5

0.1

0.05

0.01

0.005

0.001

1.0

10

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

Note:

Duty Factor D =

t1/t

2

Peak TJ = PDM x ZθJC + TC

t1

t2

0.1

SINGLE PULSE

0.02

0.05

0.2

D=0.5

0.01