MIN

TYP

MAX

APT50M60JN

71

APT50M60JN

284

1.8

650

1300

19

38

DYNAMIC CHARACTERISTICS

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d

(on)

t

r

t

d

(off)

t

f

Test Conditions

V

GS

= 0V

V

DS

= 25V

f = 1 MHz

V

GS

= 10V

V

DD

= 0.5 V

DSS

I

D

= I

D

[Cont.] @ 25

°C

V

GS

= 15V

V

DD

= 0.5 V

DSS

I

D

= I

D

[Cont.] @ 25

°C

R

G

= 0.6

Ω

MIN

TYP

MAX

11640

14000

2230

3120

800

1200

475

710

68

100

246

370

22

45

30

60

66

100

13

25

UNIT

pF

nC

ns

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Characteristic / Test Conditions

Continuous Source Current

(Body Diode)

(Body Diode)

GS

= 0V, I

S

= -I

D

[Cont.])

Reverse Recovery Time (I

S

= -I

D

[Cont.], dl

S

/dt = 100A/

µs)

Reverse Recovery Charge (I

S

= -I

D

[Cont.], dl

S

/dt = 100A/

µs)

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

UNIT

Amps

Volts

ns

µC

Characteristic / Test Conditions

Maximum Torque for Device Mounting Screws and Electrical Terminations.

UNIT

nH

Volts

pF

in-lbs

PACKAGE CHARACTERISTICS

Symbol

L

D

L

S

V

Isolation

C

Isolation

Torque

MIN

TYP

MAX

3

5

2500

70

13

APT50M60JN

µS, Duty Cycle < 2%

0.2

0.1

0.05

0.01

0.005

0.001

0.0005

1.0

10

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

SINGLE PULSE

Note:

Duty Factor D =

t1/t

2

Peak TJ = PDM x ZθJC + TC

t1

t2

0.01

0.02

0.05

0.1

0.2

D=0.5