MMDF2C02HD datasheet(4/12 Pages) MOTOROLA

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MMDF2C02HD

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

N–Channel

P–Channel

TJ = 25°C

10 V

VGS = 4.5 V

TJ, JUNCTION TEMPERATURE (°C)

– 50

100

150

0.6

VGS = 10 V

ID = 2 A

1.4

1.0

– 25

125

0.8

1.6

1.2

0.04

ID, DRAIN CURRENT (AMPS)

0.20

0.08

1.0

2.0

3.0

4.0

0.16

0.12

0.5

1.5

2.5

3.5

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

0.6

0.4

0.2

0.4

0.6

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 3. On–Resistance versus

Gate–To–Source Voltage

ID = 1.5 A

TJ = 25°C

0.05

0.06

0.07

0.08

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

0.6

1.2

1.4

1.6

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On–Resistance Variation with

Temperature

TJ = 25°C

VGS = 4.5 V

VGS = 10 V

ID = 1.5 A

10 V

– 50

– 25

100

125

150

0.8

ID, DRAIN CURRENT (AMPS)

Figure 3. On–Resistance versus

Gate–To–Source Voltage

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

Figure 5. On–Resistance Variation with

Temperature

ID = 1 A

TJ = 25°C

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