IXTH88N30P datasheet(1/5 Pages) IXYS

Part #	IXTH88N30P

Description	PolarHTTM Power MOSFET

PDF	5 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 5 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

° C to 150° C

300

V

DGR

T

J

= 25

° C to 150° C; R

GS = 1 MΩ

300

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25° C88

A

I

D(RMS)

External lead current limit

75

A

I

DM

T

C = 25° C, pulse width limited by TJM

220

A

I

AR

T

C = 25° C60

A

E

AR

T

C = 25° C60

mJ

E

AS

T

C = 25° C

2.0

J

dv/dt

I

S

≤I

DM, di/dt ≤100 A/µs, VDD ≤VDSS

10

V/ns

T

J

≤150° C, R

G = 4 Ω

P

D

T

C = 25° C

600

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

T

SOLD

Plastic body for 10 s

260

°C

M

d

Mounting torque

1.13/10 Nm/lb.in.

Weight

TO-247

6.0

g

TO-264

10

g

TO-3P & TO-268

5.5

g

G = Gate

D = Drain

S = Source

TAB = Drain

DS99129E(12/05)

Symbol

Test Conditions

Characteristic Values

(T

J = 25° C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 250 µA

300

V

GS(th)

V

DS = VGS, ID = 250µA

2.5

5.0

V

I

GSS

V

GS = ±20 VDC, VDS = 0

±100

nA

I

DSS

V

DS = VDSS

100

µA

V

GS = 0 V

T

J = 125° C1

mA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25

40

m

Ω

Pulse test, t

≤300 µs, duty cycle d ≤ 2 %

PolarHTTM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Features

l International standard package

l Unclamped Inductive Switching (UIS)

rated

l Low package inductance

- easy to drive and to protect

Advantages

l

Easy to mount

l

Space savings

l

High power density

TO-264 (IXTK)

TO-247 (IXTH)

D (TAB)

G

D

S

IXTH 88N30P

IXTK 88N30P

IXTQ 88N30P

IXTT 88N30P

V

DSS

= 300

V

I

D25

= 88

A

R

DS(on)

≤≤≤≤≤ 40 mΩ

Ω

TO-3P (IXTQ)

G

D

S

(TAB)

TO-268 (IXTT)

G

S

D (TAB)

G

D

S

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