MMFT5P03HD datasheet(4/12 Pages) MOTOROLA

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MMFT5P03HD

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

TJ, JUNCTION TEMPERATURE (°C)

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

ID, DRAIN CURRENT (AMPS)

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On–Resistance versus

Gate–To–Source Voltage

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

00.1

1000

Figure 5. On–Resistance Variation with

Temperature

Figure 6. Drain–To–Source Leakage

Current versus Voltage

VDS ≥ 10 V

–55

°C

ID = 4 A

– 50

– 25

100

125

150

VGS = 0 V

TJ = 125°C

TJ = 25°C

VGS = 4.5 V

100

°C

10 V

TJ = 100°C

0.3

0.2

0.1

0.3

0.2

2.5

3.5

4.5

0.1

0.5

1.5

VGS = 10 V

ID = 2 A

TJ = 25°C

8 V

0.4

0.8

1.6

1.2

TJ = 25°C

3.1 V

VGS = 10 V

3.5 V

4.5 V

3.7 V

3.9 V

4.1 V

4.3 V

2.7 V

6 V

3.3 V

0.1

°C

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