STTH100W04C datasheet(2/9 Pages) STMICROELECTRONICS

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Characteristics

STTH100W04C

2/8

Doc ID 023617 Rev 1

Characteristics

When diodes 1 and 2 are used simultaneously:

Tj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c)

To evaluate the conduction losses use the following equation:

P = 0.85 x IF(AV) + 0.007 IF

(RMS)

Table 2.

Absolute ratings (limiting values, at 25 °C, unless otherwise specified,

per diode)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

400

IF(RMS) Forward rms current

IF(AV)

Average forward current,

 = 0.5

Tc = 120 °C

Per diode

Tc = 110°C

Per device

100

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

350

Tstg

Storage temperature range

-65 to + 175

°C

Maximum operating junction temperature

+ 175

°C

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

Per diode

0.7

°C / W

Total

0.4

Rth(c)

Coupling

0.1

°C / W

Table 4.

Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

(1)

Pulse test: tp = 5 ms,  < 2%

Reverse leakage current

Tj = 25 °C

VR = VRRM

µA

Tj = 125 °C

250

(2)

Pulse test: tp = 380 µs,  < 2%

Forward voltage drop

Tj = 25 °C

IF = 50A

1.45

Tj = 150 °C

0.98

1.20

Tj = 25 °C

IF = 100 A

1.75

Tj = 150 °C

1.25

1.55

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