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STTH1002C-Y Datasheet(PDF) 5 Page - STMicroelectronics |
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STTH1002C-Y Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 10 page ![]() STTH1002C-Y Characteristics Doc ID 17536 Rev 2 5/9 Figure 11. Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness = 35 µm) for DPAK Figure 7. Reverse recovery time versus dIF/dt (typical values, per diode) Figure 8. Peak reverse recovery current versus dIF/dt (typical values, per diode) t (ns) rr 0 10 20 30 40 50 60 70 80 10 100 1000 dI /dt(A/µs) F I =5A F V =160V R T =25°C j T =125°C j I (A) RM 0 1 2 3 4 5 6 7 8 9 10 11 12 13 10 100 1000 dI /dt(A/µs) F I =5A F V =160V R T =25°C j T =125°C j Figure 9. Dynamic parameters versus junction temperature Figure 10. Thermal resistance junction to ambient versus copper surface under tab for D2PAK IRM Qrr 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 150 T (°C) j Q; rr I [T ]/Q ;I [T =125°C] RM j rr RM j I =5A F V =160V R 0 10 20 30 40 50 60 70 80 02468 10 12 14 16 18 20 S(Cu)(cm²) R (°C/W) th(j-a) Epoxy printed circuit board FR4, copper thickness = 35 µm 0 10 20 30 40 50 60 70 80 90 100 0 2 4 6 8 10 12 14 16 18 20 R (°C/W) th(j-a) S(Cu)(cm²) |
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