MMSF5N02HD datasheet(3/10 Pages) MOTOROLA

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MMSF5N02HD

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

0.2

0.4

0.6

0.8

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

1.5

1.7

1.9

2.1

2.3

3.3

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0.04

0.12

0.16

0.2

0.017

0.019

0.021

0.023

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 3. On–Resistance versus

Gate–to–Source Voltage

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

0.6

1.2

1.4

1.6

100

1000

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On–Resistance Variation with

Temperature

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 6. Drain–To–Source Leakage

Current versus Voltage

TJ = 25°C

VDS ≥ 10 V

TJ = 100°C

°C

– 55

°C

TJ = 25°C

VGS = 0 V

VGS = 10 V

ID = 2.5 A

VGS = 4.5 V

VGS = 10 V

ID = 2.5 A

1.2

4.5 V

3.8 V

3.1 V

2.4 V

2.5

1.4

1.6

1.8

2.7

2.9

3.1

0.08

10 V

– 50

– 25

100

125

150

TJ = 125°C

100

°C

0.8

°C

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