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ACE3422B Datasheet(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE3422B Datasheet(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 6 page ![]() ACE3422B N-Channel Enhancement Mode Field Effect Transistor VER 1.3 1 Description The ACE3422B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Features V DS(V)=60V I D=2.6A R DS(ON)=82mΩ (typ.) @VGS=10V R DS(ON)=96mΩ (typ.) @VGS=4.5V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous) TA=25 OC ID 2.6 A TA=70 OC 2.1 Drain Current (Pulse) IDM 10 A Power Dissipation TA=25 OC PD 1 W TA=70 OC 0.7 Operating Temperature / Storage Temperature TJ/TSTG -55/150 OC Packaging Type SOT-23-3 Ordering information ACE3422B XX + H BM : SOT-23-3 Pb - free Halogen - free |
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