ACE4612B datasheet(1/6 Pages) ACE

Part #	ACE4612B

Description	Complementary Enhancement Mode Field Effect Transistor

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	ACE [ACE Technology Co., LTD.]

Direct Link	http://www.ace-ele.com

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ACE4612B

Complementary Enhancement Mode Field Effect Transistor

VER 1.2

1

Description

ACE4612B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The

complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other

applications.

Features

N-channel

 V

DS=30V

 V

GS=20V

 I

D=6A

P-channel

 V

DS=-30V

 V

GS=20V

 I

D=-4A

Absolute Maximum Ratings

Parameter

Symbol N-channel P-channel Unit

Drain-Source Voltage

VDSS

30

-30

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 1)

ID

6

-4

A

Pulse Drain Current (Note 2)

IDM

30

-30

Total Power Dissipation (Note 1)

PD

1

W

Operating and Storage Temperature Range TJ,TSTG -55 to 150 -55 to 150

OC

Packaging Type

SOP-8

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ACE4612B Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

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