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ACE4613B Datasheet(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE4613B Datasheet(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 6 page  ACE4613B Complementary Enhancement Mode Field Effect Transistor VER 1.2 1 Description The ACE4613B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Features N-channel V DS=30V I D=7A P-channel V DS=-30V I D=-6A Absolute Maximum Ratings Parameter Symbol N-channel P-channel Unit Drain-Source Voltage VDSS 30 -30 V Gate-Source Voltage VGSS ±20 ±20 V Continuous Drain Current (Note 1) ID 7 -6 A Pulse Drain Current (Note 2) IDM 30 -30 Total Power Dissipation (Note 1) PD 1 1 W Operating and Storage Temperature Range TJ,TSTG -55 to 150 -55 to 150 OC Packaging Type SOP-8 |
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