 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
ACE4826B Datasheet(PDF) 1 Page - ACE Technology Co., LTD. |
|
|
|||||||||||||||||||||||||||||
ACE4826B Datasheet(HTML) 1 Page - ACE Technology Co., LTD. |
|
|
1 / 6 page  ACE4826B Dual N-Channel Enhancement Mode MOSFET VER 1.2 1 Description This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is suitable for use as a load switch, power management in PWM controlled DC/DC Converter and push-pull DC/AC Inverter Systems. Features V DS 60V, VGS 20V, ID 5.5A R DS(ON)@10V, 30mΩ (typ.) R DS(ON)@4.5V, 35mΩ (typ.) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Drain Current - Continuous ID 5.5 A Total Power Dissipation (Note1,2) PD 1 W Operating and Storage Junction Temperature Range TJ/TSTG -55/150 OC Note: 1. Surface Mounted on 1in pad area, t ≤10sec. 2. Rating for a single chip. Packaging Type SOP-8 |
Similar Part No. - ACE4826B |
|
Similar Description - ACE4826B |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
