ACE4953B datasheet(1/6 Pages) ACE

Part #	ACE4953B

Description	Dual P-Channel Enhancement Mode Field Effect Transistor

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	ACE [ACE Technology Co., LTD.]

Direct Link	http://www.ace-ele.com

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ACE4953B

Dual P-Channel Enhancement Mode Field Effect Transistor

VER 1.2

1

Description

The ACE4953B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate

charge. This device is suitable for use as a load switch or in PWM applications.

Features

 V

DS

(V)=-20V

 I

D=-5.5A (VGS=-10V)

 R

DS(ON)

<55

mΩ (V

GS=-10V)

 R

DS(ON)

<58

mΩ (V

GS=-4.5V)

 R

DS(ON)

<80

mΩ (V

GS=-2.5V)

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

-20

V

Gate-Source Voltage

VGSS

±12

V

Drain Current (Continuous) * AC

TA=25

OC

ID

-5.5

A

TA=70

OC

-4.4

Drain Current (Pulse) * B

IDM

-25

A

Power Dissipation

TA=25

OC

PD

2

W

TA=70

OC

1.5

Operating and Storage Temperature Range TJ,TSTG -55 to 150

OC

Packaging Type

SOP-8

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ACE4953B Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

ACE4953B Datasheet(HTML) 1 Page - ACE Technology Co., LTD.

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