ACE7401B datasheet(1/7 Pages) ACE

Part #	ACE7401B

Description	P-Channel Enhancement Mode Field Effect Transistor

PDF	7 Pages

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Manufacturer	ACE [ACE Technology Co., LTD.]

Direct Link	http://www.ace-ele.com

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ACE7401B

P-Channel Enhancement Mode Field Effect Transistor

VER 1.2

1

Description

The ACE7401B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate

charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.

Features

 V

DS(V)=-30V

 I

D=-29A (VGS=-10V)

 R

DS(ON)＜13mΩ (VGS=-20V)

 R

DS(ON)＜14mΩ (VGS=-10V)

 R

DS(ON)＜17mΩ (VGS=-5V)

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

-30

V

Gate-Source Voltage

VGSS

±25

V

Drain Current (Continuous)

TA=25

OC

ID

-29

A

TA=100

OC

-23

Drain Current (Pulse)

C

IDM

-60

Drain Current (Continuous)

TA=25

OC

IDSM

-12

TA=75

OC

-9.7

Power Dissipation

B

TA=25

OC

PD

29

W

TA=100

OC

12

Power Dissipation

A

TA=25

OC

PDSM

3.1

TA=70

OC

2

Operating and Storage Temperature Range

TJ,TSTG -55 to 150

OC

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

Maximum Junction-to-Ambient

A

t≦10s

RθJA

30

40

OC/W

Maximum Junction-to-Ambient

AD

Steady-State

60

75

Maximum Junction-to-Lead

Steady-State

RθJL

3.5

4.2

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ACE7401B Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

ACE7401B Datasheet(HTML) 1 Page - ACE Technology Co., LTD.

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