IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA60N10T

IXTP60N10T

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

25

42

S

C

iss

2650

pF

C

oss

V

335

pF

C

rss

60

pF

t

d(on)

27

ns

t

r

40

ns

t

d(off)

43

ns

t

f

37

ns

Q

g(on)

49

nC

Q

gs

V

15

nC

Q

gd

11

nC

R

thJC

0.85

°C/W

R

thCH

TO-220

0.50

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

T

Min.

Typ.

Max.

I

S

V

60

A

I

SM

Repetitive, pulse width limited by T

JM

240

A

V

SD

I

Note 1

1.2

V

t

rr

59

ns

I

RM

3.8

A

Q

RM

112

nC

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or moreof the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

TO-263 (IXTA) Outline

Pins: 1 - Gate

2 - Drain

3 - Source 4, TAB - Drain

Pins: 1 - Gate

2 - Drain

3 - Source 4, TAB - Drain

TO-220 (IXTP) Outline

2. On through-hole packages, R

5mm or less from the package body.

Resistive Switching Times

V

R

I

-di/dt = 100A/

μs

V

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.06

4.83

.160

.190

A1

2.03

2.79

.080

.110

b

0.51

0.99

.020

.039

b2

1.14

1.40

.045

.055

c

0.46

0.74

.018

.029

c2

1.14

1.40

.045

.055

D

8.64

9.65

.340

.380

D1

7.11

8.13

.280

.320

E

9.65

10.29

.380

.405

E1

6.86

8.13

.270

.320

e

2.54

BSC

.100

BSC

L

14.61

15.88

.575

.625

L1

2.29

2.79

.090

.110

L2

1.02

1.40

.040

.055

L3

1.27

1.78

.050

.070

L4

0

0.38

0

.015

R

0.46

0.74

.018

.029