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AP75T10GS Datasheet(PDF) 3 Page - Advanced Power Electronics Corp. |
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AP75T10GS Datasheet(HTML) 3 Page - Advanced Power Electronics Corp. |
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3 / 6 page ![]() AP75T10GS/P Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 3 0 50 100 150 200 250 02468 V DS , Drain-to-Source Voltage (V) T C =25 o C 10V 6.0 V 5.0V 4.5V V G =3.0V 0 20 40 60 80 100 120 0123456789 V DS , Drain-to-Source Voltage (V) 10V 6.0V 5.0V 4.5V V G =3.0V T C = 150 o C 11 12 13 14 15 16 17 24 68 10 V GS Gate-to-Source Voltage (V) I D =16A T C =25 o C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) I D =30A V G =10V 0 15 30 45 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD , Source-to-Drain Voltage (V) T j =25 o C T j =150 o C 0 0.5 1 1.5 2 -50 0 50 100 150 T j ,Junction Temperature ( o C) |
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