1

AM4512C

Analog Power

September, 2003 - Rev. A

PRELIMINARY

Publication Order Number:

DS-AM4512_N

These miniature surface mount MOSFETs utilize

High Cell Density process. Low r

minimal power loss and conserves energy, making

this device ideal for use in power management

circuitry. Typical applications are PWMDC-DC

converters, power management in portable and

battery-powered products such as computers,

printers, battery charger, telecommunication power

system, and telephones power system.

6.0

6.9

-4.2

-5.2

30

PRODUCT SUMMARY

-30

P & N-Channel 30-V (D-S) MOSFET

•Low r

Extends Battery Life

•

Miniature SO-8 Surface Mount Package

Saves Board Space

•

High power and current handling capability

•

Low side high current DC-DC Converter

applications

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

1

2

3

4

7

8

5

6

Symbol N-Channel P-Channel Units

30

-30

±20

±20

6.9

-5.2

-6.8

20

-20

1.3

-1.3

A

2.1

2.1

1.3

Power Dissipation

a

Operating Junction and Storage Temperature Range

W

-55 to 150

Continuous Source Current (Diode Conduction)

a

Parameter

Pulsed Drain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

Continuous Drain Current

a

A

Symbol

Maximum Units

Maximum Junction-to-Case

a

t <= 5 sec

40

Maximum Junction-to-Ambient

a

t <= 5 sec

60

THERMAL RESISTANCE RATINGS

Parameter