AM4962NE datasheet(1/5 Pages) ANALOGPOWER

Part #	AM4962NE

Description	N-Channel 60-V (D-S) MOSFET

PDF	5 Pages

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Manufacturer	ANALOGPOWER [Analog Power]

Direct Link	http://www.analogpowerinc.com/index.html

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AM4962NE

Analog Power

PRELIMINARY

Publication Order Number:

DS-AM4962NE_A

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r

DS(on) and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

VDS (V)

rDS(on) m(Ω)ID (A)

35 @ VGS = 10V

±6.4

45 @ VGS = 4.5V

±5.6

PRODUCT SUMMARY

60

N-Channel 60-V (D-S) MOSFET

•Low r

DS(on) provides higher efficiency and

extends battery life

•

Low thermal impedance copper leadframe

SOIC-8 saves board space

•

Fast switching speed

•

High performance trench technology

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

Symbol

Limit

Units

VDS

60

VGS

±20

TA=25

oC±6.4

TA=70

oC±5.2

IDM

±40

IS

2

A

TA=25

oC2.1

TA=70

oC1.3

TJ, Tstg -55 to 150

oC

Continuous Source Current (Diode Conduction)

a

ABSOLUTE MAXIMUM RATINGS (TA = 25

oC UNLESS OTHERWISE NOTED)

Parameter

Pulsed Drain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

Continuous Drain Current

a

ID

A

Power Dissipation

a

PD

Operating Junction and Storage Temperature Range

W

Symbol

Maximum

Units

t <= 10 sec

62.5

oC/W

Steady State

110

oC/W

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

a

RθJA

SOIC-8

Top View

G1

S1

S2

1

2

3

4

G2

D1

D2

8

7

6

5

D2

D

2

G

2

N-Channel

MOSFET

S

2

D

1

G

1

N-Channel

MOSFET

S

1

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