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B5818WS Datasheet(PDF) 2 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd

Part # B5818WS
Description  SCHOTTKY BARRIER DIODE
PDF  3 Pages
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Manufacturer  CHENDA [Microdiode Semiconductor (Shenzhen) Co., Ltd]
Direct Link  http://www.microdiode.com/en
Logo CHENDA - Microdiode Semiconductor (Shenzhen) Co., Ltd

B5818WS Datasheet(HTML) 2 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd

  B5818WS Datasheet HTML 1Page - Microdiode Semiconductor (Shenzhen) Co., Ltd B5818WS Datasheet HTML 2Page - Microdiode Semiconductor (Shenzhen) Co., Ltd B5818WS Datasheet HTML 3Page - Microdiode Semiconductor (Shenzhen) Co., Ltd  
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RATINGS AND CHARACTERISTIC CURVES B5817WS-B5819WS
0
10
100
NUMBER OF CYCLES AT 60Hz
FIG. 2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
FIG. 1- FORWARD CURRENT DERATING CURVE
30
25
20
15
10
5
0
CASE
TEMPERATURE(C)
1.25
1.0
0.75
0.5
0.25
0
0
20
40
60
80
100
120
140
FIG. 3- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
0
0.4
0.8
1.2
1.6
50
10
1.0
0.1
0.01
INSTANTANEOUS FORWARD VOLTAGE(V)
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
0
20
40
60
80
100
100
10
1.0
0.1
0.01
0.001
PERCENT OF RATED PEAK PEVERSE VOLTAGE
(%)
TJ=125 C
FIG. 5- TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE (V)
400
100
10
0
1
10
100
Resistive or inductive
load0.375''(9.5mm)
lead length
TJ=25 C
Pulse width=300us
1% duty cycle
TJ=125 C
TJ=75 C
TJ=25 C
0
1
10
100
100
10
1
0.1
FIG. 6-TYPICAL TRANSIENT
THERMAL IMPEDANCE
t--PULSE DURATION
(sec.)
TJ=25 C
f=1.0MHz
Vsp=50mVp-p
MDD ELECTRONIC



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