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AM7480N Datasheet(PDF) 1 Page - Analog Power |
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AM7480N Datasheet(HTML) 1 Page - Analog Power |
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1 / 5 page ![]() Analog Power AM7480N N-Channel 80-V (D-S) MOSFET VDS (V) ID(A) 12 11 Symbol Limit Units VDS 80 VGS ±20 TA=25°C 12 TA=70°C 9 IDM 60 IS 6.5 A TA=25°C 5 TA=70°C 3.2 TJ, Tstg -55 to 150 °C Symbol Maximum Units 35 65 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Pulsed Drain Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage Maximum Junction-to-Ambient a Continuous Drain Current a PRODUCT SUMMARY 80 rDS(on) (mΩ) 30 @ VGS = 10V 40 @ VGS = 4.5V Gate-Source Voltage Power Dissipation a t <= 10 sec Steady State RθJA ID A PD W Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits DFN5x6-8L c Preliminary 1 Publication Order Number: DS_AM7480N_1A |
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