DSA 30 C 200 PB

advanced

Schottky Diode Gen ²

Symbol

Definition

R a t i n g s

Features / Advantages:

typ.

max.

I

FSM

I

R

A

V

120

I

A

V

F

0.94

R

1.75 K/W

V

1

2

3

min.

15

t = 10 ms

Applications:

V

200

0.25

T

VJ

V°C

=

T

VJ

°C

=mA

2.5

Package:

Part number

V

T

I

F

=A

V

d =

P

tot

85

W

°C

=

T

VJ

175

°C

-55

V

I

=

200

15

15

T

45°C

DSA 30 C 200 PB

V

A

200

V

200

25

25

25

max. repetitive reverse voltage

reverse current

forward voltage

virtual junction temperature

total power dissipation

max. forward surge current

Conditions

Unit

1.10

°C

=25

C

J

junction capacitance

V=

V;

24

T

125

V

F0

V

0.53

T

10.8

Ω

f = 1 MHz

=

°C

25

m

V

0.78

V

15

0.95

I

F

=A

30

30

2x

threshold voltage

slope resistance

for power loss calculation only

Backside: cathode

(50 Hz), sine

V

F

=

0.78 V

● Housing:

High Performance Schottky Diode

Low Loss and Soft Recovery

Common Cathode

TO-220

R

VJ

mA

67

pF

thermal resistance junction to case

thJC

rectangular

0.5

● Very low Vf

● Extremely low switching losses

● low Irm values

● Improved thermal behaviour

● High reliability circuit operation

● Low voltage peaks for reduced

protection circuits

● Low noise switching

● Rectifiers in switch mode power

supplies (SMPS)

● Free wheeling diode in low voltage

converters

FAV

average forward current

FAV

125

IXYS reserves the right to change limits, conditions and dimensions.

20100628

Data according to IEC 60747and per diode unless otherwise specified

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