2ST501T datasheet(1/6 Pages) STMICROELECTRONICS

Part #	2ST501T

Description	HIGH VOLTAGE NPN POWER TRANSISTOR

PDF	6 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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February 2005

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HIGH VOLTAGE SPECIAL DARLINGTON

STRUCTURE

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VERY RUGGED BIPOLAR TECHNOLOGY

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HIGH OPERATION JUNCTION

TEMPERATURE

n

HIGH DC CURRENT GAIN

APPLICATIONS

n

DRIVER FOR SOLENOID, RELAY AND

MOTOR

DESCRIPTION

The 2ST501T is a High Voltage NPN silicon

transistor

in

monolithic

special

Darlington

configuration mounted in Jedec TO-220 plastic

package.

Figure 1: Package

Figure 2: Internal Schematic Diagram

Table 1: Order Codes

Table 2: Absolute Maximum Ratings

TO-220

1

2

3

Part Number

Marking

Package

Packaging

2ST501T

TO-220

TUBE

Symbol

Parameter

Value

Unit

VCES

Collector-Emitter Voltage (VBE = 0)

500

V

VCEO

Collector-Emitter Voltage (IB = 0)

350

V

VEBO

Emitter-Base Voltage (IC = 0)

5V

IC

Collector Current

4A

ICM

Collector Peak Current (tp < 5ms)

8A

IB

Base Current

0.5

A

IBM

Base Peak Current (tp < 5ms)

2.5

A

Ptot

Total Dissipation at TC = 25 oC

100

W

Tstg

Storage Temperature

-65 to 150

°C

TJ

Max. Operating Junction Temperature

150

°C

2ST501T

HIGH VOLTAGE NPN POWER TRANSISTOR

Rev. 1

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