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STM32F303VC Datasheet(PDF) 87 Page - STMicroelectronics |
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STM32F303VC Datasheet(HTML) 87 Page - STMicroelectronics |
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87 / 133 page ![]() STM32F302xx/STM32F303xx Electrical characteristics Doc ID 023353 Rev 5 87/133 6.3.14 I/O port characteristics General input/output characteristics Unless otherwise specified, the parameters given in Table 52 are derived from tests performed under the conditions summarized in Table 22. All I/Os are CMOS and TTL compliant. Table 52. I/O static characteristics Symbol Parameter Conditions Min Typ Max Unit VIL Low level input voltage TC and TTa I/O - - 0.3 VDD+0.07 (1) V FT and FTf I/O - - 0.475 VDD-0.2 (1) BOOT0 - - 0.3 VDD–0.3 (1) All I/Os except BOOT0 - - 0.3 VDD (2) VIH High level input voltage TC and TTa I/O 0.445 VDD+0.398 (1) -- FT and FTf I/O 0.5 VDD+0.2 (1) -- BOOT0 0.2 VDD+0.95 (1) -- All I/Os except BOOT0 0.7 VDD (2) -- Vhys Schmitt trigger hysteresis TC and TTa I/O - 200 (1) - mV FT and FTf I/O - 100 (1) - BOOT0 - 300 (1) - Ilkg Input leakage current (3) TC, FT and FTf I/O TTa I/O in digital mode VSS ≤ VIN ≤ VDD -- ±0.1 µA TTa I/O in digital mode VDD ≤ VIN ≤ VDDA -- 1 TTa I/O in analog mode VSS ≤ VIN ≤ VDDA -- ±0.2 FT and FTf I/O(4) VDD ≤ VIN ≤ 5V -- 10 RPU Weak pull-up equivalent resistor(5) VIN = VSS 25 40 55 k Ω RPD Weak pull-down equivalent resistor(5) VIN = VDD 25 40 55 k Ω CIO I/O pin capacitance - 5 - pF 1. Data based on design simulation. 2. Tested in production. 3. Leakage could be higher than the maximum value. if negative current is injected on adjacent pins. Refer to Table 51: I/O current injection susceptibility. 4. To sustain a voltage higher than VDD +0.3 V, the internal pull-up/pull-down resistors must be disabled. 5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This PMOS/NMOS contribution to the series resistance is minimum (~10% order). |
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