ZHCS756TA datasheet(2/5 Pages) DIODES

2 / 5 page

ZHCS756

Document number: DS33219 Rev. 3 - 6

2 of 5

www.diodes.com

December 2011

ZHCS756

PART OBSOLETE - USE SBR160S23

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Units

Continuous Reverse Voltage

Continuous Forward Current

750

Forward Voltage @ IF = 750mA

610

Average Peak Forward Current; D.C. = 50%

IFAV

1500

Non Repetitive Forward Current

≤ 100μs

IFSM

≤ 10ms

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation, TA = 25°C

500

Junction Temperature

125

°C

Storage Temperature Range

TSTG

-55 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage

V(BR)R

IR = 300μA

Forward Voltage (Note 2)

250

290

IF = 50mA

285

330

IF = 100mA

350

410

IF = 250mA

440

500

IF = 500mA

520

610

IF = 750mA

600

700

IF = 1A

760

900

IF = 1.5A

Reverse Current

100

μA

VR = 45V

Diode Capacitance

f = 1MHz, VR = 25V

Reverse Recovery Time

trr

Switched from IF = 500mA to

IR = 500mA

Measured @ IR = 50mA

Notes:

2. Measured under pulsed conditions. Pulse width = 300

μS. Duty cycle ≤ 2%.

ZHCS756TA Datasheet(PDF) 2 Page - Diodes Incorporated

ZHCS756TA Datasheet(HTML) 2 Page - Diodes Incorporated

Html Pages

1 2 3 4 5

Datasheet Download

Link URL