 2012 Microchip Technology Inc.

DS41630B-page 39

PIC18(L)F2X/4XK50

6.0

AC/DC CHARACTERISTICS TIMING REQUIREMENTS FOR PROGRAM/

VERIFY TEST MODE

Standard Operating Conditions

Operating Temperature: 25

C is recommended

Param

No.

Sym.

Characteristic

Min.

Max.

Units

Conditions

D110

8

9

V

D111

PIC18LF

1.8

3.6

V

PIC18F

2.3

5.5

V

D111A

Voltage during Write or Erase Operations PIC18LF

2.2V

V

Row Erase/Write

PIC18F

D111B

Voltage during Bulk Erase Operations

2.7

V

Bulk Erase operations

D112

—

300

A

D113

Supply Current During Programming

—10

mA

D031

Input Low Voltage

V

D041

Input High Voltage

V

D080

Output Low Voltage

—0.6

V

D090

Output High Voltage

—

V

D012

Capacitive Loading on I/O pin (PGD)

—

50

pF

To meet AC

specifications

P1

—

1.0

s

(Note 1)

P2

Serial Clock (PGC) Period

100

—

ns

1—

P2A

Serial Clock (PGC) Low Time

40

—

ns

400

—

ns

P2B

Serial Clock (PGC) High Time

40

—

ns

400

—

ns

P3

Input Data Setup Time to Serial Clock



15

—

ns

P4

Input Data Hold Time from PGC



15

—

ns

P5

Delay between 4-bit Command and Command Operand

40

—

ns

P5A

Delay between 4-bit Command Operand

and next 4-bit Command

40

—

ns

P6

Delay between Last PGC

 of Command Byte to First PGC

 of Read of Data Word

20

—

ns

P9

PGC High Time (minimum programming

time)

1

—

ms

Externally Timed

P9A

PGC High Time

5

ms

Configuration Word

programming time

P10

PGC Low Time after Programming

(high-voltage discharge time)

200

—

s

P11

Delay to allow Self-Timed Bulk Erase to

occur

PIC18(L)FX5K50

PIC18(L)FX6K50

15

—

ms

PIC18(L)F24K50

12

—

ms

P11A

Data Write Polling Time

4

—

ms

Note

1:

to occur. The maximum transition time is:

oscillator period. For specific values, refer to the Electrical Characteristics section of the device data sheet for the

particular device.