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STL160N3LLH6 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STL160N3LLH6
Description  N-channel 30 V, 0.0011 廓, 35 A PowerFLAT??5x6 STripFET??VI DeepGATE??Power MOSFET
PDF  16 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL160N3LLH6 Datasheet(HTML) 3 Page - STMicroelectronics

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STL160N3LLH6
Electrical ratings
Doc ID 18223 Rev 2
3/16
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
30
V
VGS
Gate-source voltage
± 20
V
ID
(1)
1.
The value is rated according to Rthj-c .
Drain current (continuous) at TC = 25 °C
160
A
ID
(1)
Drain current (continuous) at TC = 100 °C
100
A
ID
(2)
2.
The value is rated according to Rthj-pcb.
Drain current (continuous) at Tpcb = 25 °C
35
A
ID
(2)
Drain current (continuous) at Tpcb=100 °C
21.8
A
IDM
(3)
3.
Pulse width limited by safe operating area.
Drain current (pulsed)
140
A
PTOT
(1)
Total dissipation at TC = 25 °C
80
W
PTOT
(3)
Total dissipation at Tpcb = 25 °C
4
W
Derating factor
0.03
W/°C
Tj
Tstg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case (drain, steady state)
1.56
°C/W
Rthj-pcb
(1)
1.
When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec.
Thermal resistance junction-ambient
31.3
°C/W
Table 4.
Avalanche data
Symbol
Parameter
Value
Unit
IAV
Not-repetitive avalanche current,
(pulse width limited by Tj max)
35
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAV )
900
mJ



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