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2SC4226 Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # 2SC4226
Description  NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold
PDF  8 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC4226 Datasheet(HTML) 2 Page - Renesas Technology Corp

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2SC4226
R09DS0022EJ0200 Rev.2.00
Page 2 of 6
Jun 29, 2011
ELECTRICAL CHARACTERISTICS (TA = +25
°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 10 V, IE = 0
−
−
1.0
μA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0
−
−
1.0
μA
DC Current Gain
hFE
Note 1
VCE = 3 V, IC = 7 mA
40
110
250
–
RF Characteristics
Gain Bandwidth Product
fT
VCE = 3 V, IC = 7 mA
3.0
4.5
–
GHz
Insertion Power Gain
⏐S21e⏐2
VCE = 3 V, IC = 7 mA, f = 1 GHz
7
9
–
dB
Noise Figure
NF
VCE = 3 V, IC = 7 mA, f = 1 GHz
−
1.2
2.5
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 3 V, IE = 0, f = 1 MHz
−
0.7
1.5
pF
Notes 1. Pulse measurement: PW
≤ 350
μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
R23/Y23
R24/Y24
R25/Y25
Marking
R23
R24
R25
hFE Value
40 to 80
70 to 140
125 to 250
<R>



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