Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

Preview PDF HTML

STL57N65M5 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STL57N65M5
Description  N-channel 650 V, 0.061 廓 typ., 22.5 A MDmesh??V Power MOSFET in a PowerFLAT??8x8 HV package
PDF  16 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL57N65M5 Datasheet(HTML) 5 Page - STMicroelectronics

  STL57N65M5 Datasheet HTML 1Page - STMicroelectronics STL57N65M5 Datasheet HTML 2Page - STMicroelectronics STL57N65M5 Datasheet HTML 3Page - STMicroelectronics STL57N65M5 Datasheet HTML 4Page - STMicroelectronics STL57N65M5 Datasheet HTML 5Page - STMicroelectronics STL57N65M5 Datasheet HTML 6Page - STMicroelectronics STL57N65M5 Datasheet HTML 7Page - STMicroelectronics STL57N65M5 Datasheet HTML 8Page - STMicroelectronics STL57N65M5 Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 5 / 16 page
background image
STL57N65M5
Electrical characteristics
Doc ID 022996 Rev 2
5/16
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
td(V)
tr (V)
tf(i)
tc(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
VDD = 400 V, ID = 22.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
-
84
10.8
11
16.5
-
ns
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
ISD
(1)
ISDM
(1)(2)
1.
The value is rated according to Rthj-case and limited by package
2.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
-
22.5
90
A
A
VSD
(3)
3.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 22.5 A, VGS = 0
-
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 22.5 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 16)
-
378
7
37
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 22.5 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 16)
-
454
9.5
42
ns
µC
A



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com