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IXTP32N20T Datasheet(PDF) 5 Page - IXYS Corporation

Part # IXTP32N20T
Description  TrenchTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated
PDF  6 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTP32N20T Datasheet(HTML) 5 Page - IXYS Corporation

  IXTP32N20T Datasheet HTML 1Page - IXYS Corporation IXTP32N20T Datasheet HTML 2Page - IXYS Corporation IXTP32N20T Datasheet HTML 3Page - IXYS Corporation IXTP32N20T Datasheet HTML 4Page - IXYS Corporation IXTP32N20T Datasheet HTML 5Page - IXYS Corporation IXTP32N20T Datasheet HTML 6Page - IXYS Corporation  
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© 2010 IXYS CORPORATION, All Rights Reserved
IXTA32N20T
IXTP32N20T
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
8
10
12
14
16
18
20
16
18
20
22
24
26
28
30
32
ID - Amperes
RG = 10Ω
VGS = 15V
VDS = 100V
TJ = 25ºC
TJ = 125ºC
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
0
5
10
15
20
25
30
35
40
45
10
14
18
22
26
30
34
38
42
46
50
RG - Ohms
13
14
15
16
17
18
19
20
21
22
t r
td(on) - - - -
TJ = 125ºC, VGS = 15V
VDS = 100V
I D = 16A
I D = 32A
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
16
18
20
22
24
26
28
30
32
34
36
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
44
46
48
50
52
54
56
58
60
62
64
t f
td(off) - - - -
RG = 10Ω, VGS = 15V
VDS = 100V
I D = 16A
I D = 32A
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
14
18
22
26
30
34
38
16
18
20
22
24
26
28
30
32
ID - Amperes
46
48
50
52
54
56
58
t f
td(off) - - - -
RG = 10Ω, VGS = 15V
VDS = 100V
TJ = 25ºC
TJ = 125ºC
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
8
10
12
14
16
18
20
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
RG = 10Ω
VGS = 15V
VDS = 100V
16A < I D < 32A
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
0
10
20
30
40
50
60
70
80
90
100
10
14
18
22
26
30
34
38
42
46
50
RG - Ohms
10
30
50
70
90
110
130
150
170
190
210
t f
td(off) - - - -
TJ = 125ºC, VGS = 15V
VDS = 100V
I D = 32A
I D = 16A



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