IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.

IXTA120P065T IXTH120P065T

IXTP120P065T

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note

1. Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

45

75

S

C

iss

13.2

nF

C

oss

V

1345

pF

C

rss

505

pF

t

d(on)

31

ns

t

r

28

ns

t

d(off)

38

ns

t

f

21

ns

Q

g(on)

185

nC

Q

gs

V

55

nC

Q

gd

58

nC

R

thJC

0.42

°C/W

R

thCS

(TO-220)

0.50

°C/W

(TO-247)

0.21

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

- 120

A

I

SM

Repetitive, Pulse Width Limited by T

JM

- 480

A

V

SD

I

-1.3

V

t

rr

53

ns

Q

RM

77

nC

I

RM

- 2.9

A

Resistive Switching Times

V

R

I

V

TO-247 Outline

Pins:

1 - Gate

2 - Drain

3 - Source

4 - Drain

TO-220 Outline

1 = Gate

2 = Drain

3 = Source

TO-263 Outline

1. Gate

2. Drain

3. Source

4. Drain

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.06

4.83

.160

.190

b

0.51

0.99

.020

.039

b2

1.14

1.40

.045

.055

c

0.40

0.74

.016

.029

c2

1.14

1.40

.045

.055

D

8.64

9.65

.340

.380

D1

8.00

8.89

.280

.320

E

9.65

10.41

.380

.405

E1

6.22

8.13

.270

.320

e

2.54

BSC

.100

BSC

L

14.61

15.88

.575

.625

L1

2.29

2.79

.090

.110

L2

1.02

1.40

.040

.055

L3

1.27

1.78

.050

.070

L4

0

0.13

0

.005